Publications
Controlling THz and far-IR waves with chiral and bianisotropic metamaterials
G. Kenanakis, E. N. Economou, C. M. Soukoulis, M. Kafesaki
EPJ Appl. Metamat, 2, 15, 2016, https://doi.org/10.1051/epjam/2015019
Hydration-induced spin-glass state in a frustrated Na-Mn-O triangular lattice
I. Bakaimi, R. Brescia, C.M. Brown, A.A. Tsirlin, M.A. Green, and A. Lappas
Phys. Rev. B, 93, 184422, 2016, doi.org/10.1103/PhysRevB.93.184422
Extreme events in complex linear and nonlinear photonic media
M Mattheakis, IJ Pitsios, GP Tsironis, S Tzortzakis
Chaos, Solitons & Fractals, 84, 73-80, 2016, https://doi.org/10.1016/j.chaos.2016.01.008
Fiber Endface Fabry-Perot Microsensor With Distinct Response to Vapors of Different Chlorinated Organic Solvents
V. Melissinaki, I. Konidakis, M. Farsari, and S. Pissadakis
IEEE Sensors Journal , 16, 7094-7100, 2016, doi.org/10.1109/jsen.2016.2596139
Matter-wave interferometers using TAAP rings
P. Navez, S. Pandey, H. Mas, K. Poulios, T. Fernholz, and W. von Klitzing
N J Phys, 18, 075014, 2016, dx.doi.org/10.1088/1367-2630/18/7/075014
Micro FTIR imaging for the investigation of deteriorated organic binders in wall painting stratigraphies of different techniques and periods
Sotiropοulou, S., Papliaka, Z., Vaccari, L
Microchemical journal , 124, 559-567, 2016, doi.org/10.1016/j.microc.2015.10.002
In-situ SiNx/InN structures for InN field-effect transistors
Ch. Zervos, A. Adikimenakis, P. Beleniotis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis and A. Georgakilas
App. Phys. Letters, 108, 142102, 2016, https://doi.org/10.1063/1.4945668
Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
K. Moratis, S. L. Tan, S. Germanis, C. Katsidis, M. Androulidaki, K. Tsagaraki, Z. Hatzopoulos, F. Donatini, J. Cibert, Y. -M. Niquet, H. Mariette and N.T. Pelekanos
Nanoscale Research Letters, 11, 176, 2016, doi.org/10.1186/s11671-016-1384-y
Robust authentication through stochastic femtosecond laser filament induced scattering surfaces
H Zhang, S Tzortzakis
Applied Physics Letters, 108, 21, 211107, 2016, https://doi.org/10.1063/1.4952716
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
J. E. Kruse, L. Lymperakis, S. Eftychis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand, T. Koukoula, Th. Kehagias, Ph. Komninou, G. Konstantinidis and A. Georgakilas
Journal of Applied Physics, 119, 224305, 2016, doi.org/10.1063/1.4953594

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