Publications
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
Journal of Applied Physics, 119, 224305, 2016, doi.org/10.1063/1.4953594
Evaluation of the performance of two state-transfer Hamiltonians in the presence of static disorder
Quant. Inf. Proc., 15, 2553, 2016, doi.org/10.1007/s11128-016-1287-y
THz generation by two-color femtosecond filaments with complex polarization states: four-wave mixing versus photocurrent contributions
Plasma Physics and Controlled Fusion, 59, 1, 014025, 2016, https://doi.org/10.1088/0741-3335/59/1/014025
Morphology and Structure of Nb Thin Films Grown by Pulsed Laser at Different Substrate Temperatures
J. Mater. Sci. Technol., 32 , 1192 , 2016, 10.1016/j.jmst.2016.10.005
Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
Materials Science Forum, 858, 913 - 916, 2016, doi.org/10.4028/www.scientific.net/MSF.858.913
Inkjet-Printed Graphene Oxide Thin Layers on Love Wave Devices for Humidity and Vapor Detection
IEEE Sensors, 16, 21, 7620 - 7627, 2016, doi.org/10.1109/JSEN.2016.2600269
Study of low temperature rf-sputtered Mg-doped vanadium dioxide thermochromic films deposited on low-emissivity substrates
Thin Solid Films, 601, 99 - 105, 2016, doi.org/10.1016/j.tsf.2015.11.007
Abruptly autofocusing beams enable advanced multiscale photo-polymerization
Optica, 3, 525-530, 2016, doi.org/10.1364/optica.3.000525
Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Semicond. Sci. Technol., 31, 6, 065011, 2016, doi.org/10.1088/0268-1242/31/6/065011
SERS and 2D-Fluorescence for the investigation of aminoacids and egg proteins
Microchemical Journal, 126, 230-236, 2016, doi.org/10.1016/j.microc.2015.12.008
